Species with the same structure: Silica, vitreous Dioxosilane Other names: alpha-quartz; Silicon oxide Information on this page: Infrared Spectrum References Notes Other data available: Condensed phase thermochemistry data IR Spectrum Options: Switch to calorie-based units

1982年7月1日 · Infrared transmission spectra of a series of silicon dioxide (SiO 2 ) films grown on silicon wafers from a HCl and O 2 gas mixture at 850 °C, have been studied for film thicknesses down...

1979年2月1日 · The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO 2 on Si substrates in the vicinity of the 0.14‐eV (9 μ) lattice absorption band of SiO 2.

Fourier Transform Infrared (FTIR) spectroscopy provides a direct probe of molecular and submolecular structures via the excitation of vibrational states in the molecules over a specific mid-IR range (400-5000cm-1) [1-8]. Raman spectroscopy has been utilised recently to investigate stress and phase transformation in silicon structures [9-14].

Fourier transform infrared spectroscopy studies revealed the presence of... ... shown in fig. 5, FTIR transmittance spectrum (400 to 4000 cm −1 ) confirms the presence of synthesized SiO 2...

2020年1月27日 · The absorption spectral characteristics of silicon dioxide films in the IR range (λ = 8–14 µ m) were studied to determine the optimal absorber thickness in the matrix structure of Golay microcells in order to design highly sensitive IR detectors.

1988年11月14日 · A series of refractive index enhanced multiple internal reflection spectra reveals a clear thickness‐dependent structural transformation in thermal SiO 2. The spectra suggest a shift in ring statistics, from smaller to larger, with increasing distance from the oxide‐silicon interface.

1980年11月1日 · It is shown that the infrared absorption band at 1230 cm −1, observed under certain conditions of oxygen precipitation in silicon, is the LO mode of SiO 2. The LO mode, which is normally infrared inactive, becomes infrared active under the condition of polarization of small (<0.36 μm) platelets in an appropriate dielectric matrix (silicon).

1997年6月2日 · The shape of the infrared absorption spectra of thermally grown silicon dioxide films on Si (100) is analyzed in order to characterize the oxide quality as a function of distance from the Si/SiO 2 interface.

The complex index of refraction N=n−ik for amorphous SiO2 is derived in the energy range 0.03–1.0 eV by Kramers‐Kronig analysis of reflectance data. The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO2 on Si substrates in the vicinity of the 0.14‐eV (9 μ) lattice absorption band of SiO2.