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In an ASML lithography machine, the stage moves two wafer tables simultaneously, each holding a silicon wafer. While one wafer is being exposed, the position of the other wafer is measured by the machine’s metrology sensors. This dual-stage system architecture is called TWINSCAN, which ASML first brought to market in 2000.

Lithography Using ASML Stepper Page 16 STAGE ACCURACY The stage position is very accurate. Its position is measured using a laser interferometer that has a fundamental accuracy of λ/8 ~0.08µm. The interferometer measures the position of the mirrors on the x and y stages while the wafer is some distance from the mirrors on the stage.

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ASML光刻机的双工件台（wafer stage）是为了提高wafer光刻处理速度（throughput）的专利性设计。 其原理其实很简单。 小学阶段都学过华罗庚的统筹算法：每天起床三件事，烧水10分钟，刷牙3分钟，洗脸5分钟，该怎样安排最省时？

2021年8月24日 · ASML光刻机可实现 每秒两万次量测定位校正， 以精度达到60皮米（0.06纳米， 比一个硅原子还要小）的传感器确认精准定位。 ASML最先进的DUV光刻机，每天可以光刻6,000片以上的晶圆，也就是每天要来回扫描60万次以上。 如何做到24小时运作，365天全年无休，依然维持纳米精度？ 晶圆平台难道不会磨损吗？ 事实上晶圆平台是采取所谓无接触移动的。 讲得玄一点，晶圆平台在成像扫描过程中，都是飘浮在空中快速来回运动的。 ASML晶圆平台的 …

2022年2月3日 · Its super-fast, super-precise stage and alignment have been unique selling points for decades, the reasons why chipmakers buy the Dutch lithography machines. The electric table makes ASML’s steppers the most productive in the world, and the alignment system ensures that despite that high speed, everything runs at ultra-precision.

ASML Alignment and Exposure STAGE ACCURACY The stage position is very accurate. Its position is measured using a laser interferometer that has a fundamental accuracy of λ/8 ~0.08µm. The interferometer measures the position of the mirrors on the x and y stages while the wafer is some distance from the mirrors on the stage.

2021年8月24日 · ASML光刻机可实现 每秒两万次量测定位校正， 以精度达到60皮米（0.06纳米， 比一个硅原子还要小）的传感器确认精准定位。 ASML最先进的DUV光刻机，每天可以光刻6,000片以上的晶圆，也就是每天要来回扫描60万次以上。 如何做到24小时运作，365天全年无休，依然维持纳米精度？ 晶圆平台难道不会磨损吗？ 事实上晶圆平台是采取所谓无接触移动的。 讲得玄一点，晶圆平台在成像扫描过程中，都是飘浮在空中快速来回运动的。 ASML晶圆平台的 …

4.1 General Description - The ASML PAS 5500/200 is a 5x reduction, i-line stepper set up for exposure of 6 inch wafers using 6 inch reticles. The system has 350nm resolution with a 0.48-0.60 variable numerical aperture. The maximum field size on the wafer is 22x22mm. Overlay capability is better than 50nm.