Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

for solid-state power amplifiers (SSPAs) in Ka-, Q- and W-band using the newly developed GaN HEMTs. SSPAs are characterized ...

In 5G, the number of bits transmitted per second will be humungous, and future systems will ask for even more; current microwave devices which are used to transmit these bits in 4G networks do not ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...

(OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete ...

GaN power devices, which are already utilised in ... adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...