一、砷化镓表面存在氧化层GaAs属于闪锌矿结构，具有立方晶系Fm3m空间群，晶胞参数为5.646 。Ga原子位于晶胞的顶点，As原子位于晶胞的面心和体内 ...

Win Semiconductors (WIN), a GaAs foundry, is reportedly one of the beneficiaries of Apple's in-house RF component initiative. Although the Taiwan-based company has declined to provide any ...

一、砷化镓表面存在氧化层 GaAs属于闪锌矿结构，具有立方晶系Fm3m空间群，晶胞参数为5.646 Å。Ga原子位于晶胞的顶点，As原子位于晶胞的面心和体内，形成四面体结构。 GaAs表面在空气中容易发生氧化反应，生成氧化物如Ga2O3、As2O3和As2O5。这些氧化物进一步与GaAs ...

RS: The progress of the compound semiconductor industry can be seen in the increase in substrate size. Your company talks about this, using the phrase ‘Going large’. You feel that the first ...

Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, Aalto FI-00076, Finland ...

10/2021: "Tunable gigahertz dynamics of low-temperature skyrmion lattice in a chiral magnet" published in J ... 01/2021: "Growth, strain, and spin-orbit torques in epitaxial Ni-Mn-Sb films sputtered ...

Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, Institute of Applied and Environmental Chemistry, College of Chemistry, Central China Normal University, Wuhan 430079, P. R.

The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has ...