One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

We are a Team of Research Scholars and Professors from IIT Madras,Chennai who are working to develop a compact model for GAN-HEMT.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

(OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete ...

This switch offers high peak power and is designed to replace Positive-Intrinsic-Negative (PIN) diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military ...

Greensboro, NC (BUSINESS WIRE) - Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...