The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a ...
Phys.org on MSN9 天
Plasma technique doubles etch rate for 3D NAND flash memoryTo store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...
Usually pure silicon oxide, the i3N team swapped in a very thin sheet of paper 3. “I thought there was a very low probability it would work,” she says. “We were really happy when it did.” ...
Although silicon-based all-solid-state batteries should be theoretically more durable than conventional LIBs, an unsolved challenge still stands before this becomes a reality. When a Si-based all ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
In particular, the SiO 2 oxide was treated by nitridation to enhance its scalability and improve transistor reliability. In the 90-nm node, strained silicon technology was introduced to boost ...
Today’s battery market is under immense pressure to deliver improved battery performance and lower cost,” said Jim Cushing, CEO of Elevated Materials. “We are helping our customers solve these ...
A display rumor states that the MacBook Air (2027), like existing MacBook Pro models, will switch from amorphous silicon to oxide TFT LCD.
Researchers at the Northwestern Polytechnical University in China have fabricated a four-terminal (4T) semi-transparent perovskite-silicon tandem solar cell based on a top perovskite cell ...
来自MSN3 个月
Researchers develop highly passivated TOPCon bottom cells for perovskite/silicon tandem ...In particular, silicon solar cells with tunnel oxide passivating contact (TOPCon) structures are rising as a competitive photovoltaic technology, due to their ultra-high power conversion ...
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