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电子工程专辑
22 天
聚焦SiC&GaN!行家说三代半2025全年规划正式揭晓
过去一年,碳化硅/氮化镓在技术演进与市场应用的深度耦合中持续突破,随着工艺成熟与终端场景拓展,其产业化进程持续 ...
电子工程专辑
17 天
三代半国创中心深圳综合平台:打造8吋开放共享平台,推动SiC&GaN ...
我认为,未来发展方向主要为: 1.尺寸升级与成本优化:国内企业引领8英寸SiC材料与晶圆产业化,推动从6英寸向8英寸升级,降低成本,天岳先进等已研制出12英寸碳化硅衬底。GaN同样依托8英寸产线提升相对于传统Si器件的性能、可靠性和成本竞争力。 2.应用 ...
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