The hybrid integration of GaN and silicon paves the way for high-efficiency, cost-effective 5G and millimetre-wave RF systems that provide a cutting-edge power density and scalability.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... “Today, we’re releasing our latest RF GaN Switch, optimized for Aerospace and Defense applications ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

HEMT to hold significant market share during the forecast period.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...