Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

for solid-state power amplifiers (SSPAs) in Ka-, Q- and W-band using the newly developed GaN HEMTs. SSPAs are characterized ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

GaN power devices, which are already utilised in ... adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

This switch offers high peak power and is designed to replace Positive-Intrinsic ... Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, this switch offers a very high ...

的紧凑型车载充电器 (OBC)，该充电器采用了基于GaN单晶衬底的1200V 横向GaN HEMT器件。 近年来，为了缩短充电时间，电动汽车电池的电压不断提高。为了应对这些趋势，业界正在开发的OBC旨在实现 ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...