Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected to be introduced in high-volume semiconductor chip production over the next three years. Research is now underway to investigate sub-10 ...
1). Figure 1: Since the mid-1980s, the wavelength of light used in lithography systems has reduced by almost half from 365 nm to 193 nm. Extreme ultraviolet (EUV) lithography is the next step in ...
This enables the EUV lithography era of today, which is likely to continue for the foreseeable future. Initially, EUV became ...
A pilot line will begin at Rapidus’ IIM-1 in April 2025. A single-wafer process will be introduced for all manufacturing ...
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US lab to explore ‘beyond EUV’ lithography to produce powerful semiconductors fasterA California-based laboratory is set to lay the groundwork for the next evolution of extreme ultraviolet (EUV) lithography. Led by Lawrence Livermore National Laboratory (LLNL), the project aims ...
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American lab is developing a BAT laser that could enable 'beyond EUV' lithography, provide 10X power efficiency boostThis advancement could pave the way for a new generation of 'beyond EUV' lithography systems that produce chips quicker and with less power. Of course, implementing BAT technologies into ...
A new technical paper titled “Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam ...
Breakthrough EUV Dry Photoresist Technology from Lam Research Adopted by Leading Memory Manufacturer
Lam Research Corporation (Nasdaq: LRCX) today announced that Aether®, its innovative dry photoresist technology, has been ...
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